基于多晶硅填充的TSV工艺制作

硅通孔( TSV)技术用于MEMS器件可实现器件结构的垂直互联，达到减小芯片面积、降低器件功耗等目的。对TSV结构的刻蚀和填充工艺进行了研究，通过优化ICP刻蚀工艺参数获得了端口、中部、底部尺寸平滑减小、深宽比大于20∶1的硅通孔；利用LPCVD技术实现了基于多晶硅的通孔无缝填充；经测试，填充后通孔绝缘电阻达10 GΩ以上，电绝缘性能良好。

Fabrication of Through-Silicon-Vias filled with polysilicon

TSV( Through Silicon Via) for MEMS device can realize the vertical interconnection of device structures, then we can achieve the purpose of reducing the chip area and decreasing the power consumption of the device. we discussed the fabrication and filling processes of TSV. By optimizing the ICP etching processes, we get the TSV structure whose opening,middle and bottom size smoothly decreases,and the ratio of depth to width is greater than 20∶1;we use LPCVD( Low Pressure Chemical Vapor Deposition) technology to realize the seamless filling of TSV with polysilicon;After testing of the TSV structure for Insulation characteristics,the insulation resistance of the TSV is more than 10 GΩ,that is,the electrical insulation performance is excellent.