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XTEM study of Al doped TiO2 anatase epitaxial films deposited on MgO by pulsed laser deposition |
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| Authors: | V. S. Teodorescu M. G. Blanchin C. Garapon C. Champeaux |
| Affiliation: | (1) National Institute for Physics of Materials, P.O. Box, Mg-7 Bucharest-Magurele, 76900 Bucharest, Romania;(2) Département de Physique des Matériaux, CNRS UMR 5586, Université Claude-Bernard, 69622 Villeurbanne Cedex, France;(3) Laboratoire de Physicochimie des Matériaux Luminescents, CNRS UMR 5620, Université Claude-Bernard, 69622 Villeurbanne Cedex, France;(4) Laboratoire de Matériaux Céramiques et Traitements des Surfaces, CNRS ESA 6015, Université de Limoges, 87060 Limoges Cedex, France |
| Abstract: | Al doped TiO2 anatase films epitaxially grown by Pulsed Laser Deposition (PLD) on MgO single crystal substrates have been studied by cross-section transmission electron microscopy. The main structural features of such films are the columnar morphology of the anatase grains and the formation of a spinel buffer layer at the TiO2/MgO interface. The spinel layer is Al rich and displays a steep gradient in Mg composition. Correlation between the microstructure and the optical properties of the films is presented also. |
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