| Photoluminescence Spectra of Post-heat-treated Porous Silicon |
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| 作者单位： | Dept. of Phys. and Inform. Tech .，Changsha Univ. of Electr. Power，Changsha 410077，CHN |
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| 摘 要： | Porous silicon prepared by pulse electro-etching is heat-treated in O2 atmosphere with an enhancement of its PL peak and an improvement of its PL stability. The PL peak of a sample porous silicon treated in O2 atmosphere at 1000℃ presents itself a three-peak structure and, compared with an un- heat-treated sample, there exists blue shift of ～ 40nm.
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Photoluminescence Spectra of Post-heat-treated Porous Silicon |
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| LIU Xiao-bing,SHI Xiang-hua. Photoluminescence Spectra of Post-heat-treated Porous Silicon[J]. Semiconductor Photonics and Technology, 2002, 8(4) |
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| Authors: | LIU Xiao-bing SHI Xiang-hua |
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| Affiliation: | Dept. of Phys. and Inform. Tech ., Changsha Univ. of Electr. Power, Changsha 410077, CHN Dept. of Phys. and Inform. Tech ., Changsha Univ. of Electr. Power, Changsha 410077, CHN |
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| Abstract: | Porous silicon prepared by pulse electro-etching is heat-treated in O2 atmosphere with an enhancement of its PL peak and an improvement of its PL stability. The PL peak of a sample porous silicon treated in O2 atmosphere at 1000℃ presents itself a three-peak structure and, compared with an un- heat-treated sample, there exists blue shift of ～ 40nm. |
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| Keywords: | Heat treatment Blue shift Stability Photoluminescence |
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