| 密闭热系统中拉制硅单晶 |
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| 引用本文： | 叶祖超,陆荣.密闭热系统中拉制硅单晶[J].上海有色金属,1998,19(3):102-105. |
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| 作者姓名： | 叶祖超 陆荣 |
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| 作者单位： | 上海硅材料厂!上海，201617，上海硅材料厂!上海，201617 |
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| 摘 要： | 本文介绍采用密闭热系统拉晶工艺拉制硅单晶的情况。试验表明：密闭拉晶不仅有利于减少电耗和氢气消耗，而且可有效地降低硅单晶的氧含量和热氧化层错密度。文中还对密闭系统的材料、形状、放置及作用作了具体描述。
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| 关 键 词： | 硅单晶 热系统 拉晶工艺 硅中氧 热氧化层错 |
DRAWING OF SINGLE CRYSTAL SILICON IN CLOSED THERMAL SYSTEM |
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| Ye Zuchao, Lu Rong.DRAWING OF SINGLE CRYSTAL SILICON IN CLOSED THERMAL SYSTEM[J].Shanghai Nonferrous Metals,1998,19(3):102-105. |
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| Authors: | Ye Zuchao Lu Rong |
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| Abstract: | The drawing of single crystal silicon in a closed thermal system is described. It is shown through theexperiment that drawing in a closed system will help reduce the consumptions of electric power and argon gas and reduce theoxygen concentration and the density of oxidation induced stacking faults of single crystal silicon. The materials used,shape, arrangement and functions of the closed system are discribed in detail. |
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| Keywords: | Single crystal silicon Thermal system Crystal drawing Process Oxygen in silicon Oxidation inducedstacking faults |
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