| 多晶硅的ECR等离子体刻蚀 |
| |
| 引用本文： | 陈永生 汪建华. 多晶硅的ECR等离子体刻蚀[J]. 武汉化工学院学报, 2003, 25(1): 64-68 |
| |
| 作者姓名： | 陈永生 汪建华 |
| |
| 作者单位： | 武汉化工学院等离子体化学与新材料重点实验室，武汉化工学院等离子体化学与新材料重点实验室 湖北武汉430073，湖北武汉430073 |
| |
| 基金项目： | 湖北省教育厅1999年科研计划重点项目(99Z022) |
| |
| 摘 要： | 报道了用CF4作工作气体的ECR刻蚀poly－Si技术，研究了微波功率、气体流量、气压和射频偏置功率对刻蚀速率的影响，并对实验结果进行了讨论，实验中微波等离子体功率范围在100－500W，CF4气体流量在10－50cm^3/min（标准状态下）范围，气压在0.25-2.5Pa范围，射频偏置功率在0－300W范围，对应的刻蚀速率为10.4-46.2nm/min。
|
| 关 键 词： | 多晶硅 ECR 等离子体 刻蚀 电子回旋共振 |
| 文章编号： | 1004-4736(2003)01-0064-05 |
| 修稿时间： | 2002-11-04 |
Poly-Si etching by CF_4 in electron cyclotron resonance plasma |
| |
| CHEN Yong-sheng,WANG Jian-hua. Poly-Si etching by CF_4 in electron cyclotron resonance plasma[J]. Journal of Wuhan Institute of Chemical Technology, 2003, 25(1): 64-68 |
| |
| Authors: | CHEN Yong-sheng WANG Jian-hua |
| |
| Abstract: | The ECR etching of poly-Si by using of CF 4 was reported. The effects of microwave power, gas flow rate, chamber pressure, and rf-bias power on the etch rate were investigated.When the microwave power varied between 100 and 500 watts, CF 4 flow rate was 10~50 cm 3/min, pressure was in the range of 0.25~2.5 Pa, rf-bias power varied between 0 and 300 watts, the etch rate varied between 10.4 and 46.2 nm/min. |
| |
| Keywords: | electron cyclotron resonance etching poly-Si |
| 本文献已被 CNKI 维普 等数据库收录！ |
