| 微电子中先进复合材料抗紫外辐射研究 |
| |
| 引用本文： | 董远鹏,王铎. 微电子中先进复合材料抗紫外辐射研究[J]. 应用化工, 2009, 38(12): 1769-1770 |
| |
| 作者姓名： | 董远鹏 王铎 |
| |
| 作者单位： | 1. 陕西广电传媒股份有限公司,陕西,汉中,723000
2. 陕西理工学院,材料学院,陕西,汉中,723000 |
| |
| 摘 要： | 采用溶胶-凝胶法制备了纳米碳化硅(S iC)聚/酰亚胺(PI)复合材料,研究了纳米碳化硅的加入量对复合材料紫外光吸收和抗吸水性能的影响。结果表明,随nano-S iC用量的增加,nano-S iC/PI复合材料的吸水率有所下降,但对紫外光吸收明显增加,热解温度逐渐升高。
|
| 关 键 词： | 微电子 抗紫外辐射 复合材料 |
Study of UV radiation properties of advanced composites in microelectronics |
| |
| DONG Yuan-peng,WANG Duo. Study of UV radiation properties of advanced composites in microelectronics[J]. Applied chemical industry, 2009, 38(12): 1769-1770 |
| |
| Authors: | DONG Yuan-peng WANG Duo |
| |
| Abstract: | Silicon carbide (SiC)/polyimide (PI) composite was prepared by sol-gel method.The effects of the amount of nano-SiC on the curing results and anti-absorbent properties of nano-SiC/PI composite were studied.The results showed that the water absorption of the nano-SiC/PI composite desreased,but the UV absorption of the nano-SiC/PI composite obviously increased with increasing the dosage of the nano-SiC.The thermal decomposition temperature of nano-SiC/PI became gradually higher with the increasing the addition of nano-SiC. |
| |
| Keywords: | microelectronics UV radiation composite materials |
| 本文献已被 维普 万方数据 等数据库收录！ |
|
