The scaled performance of Si/Si1-xGexresonant tunneling diodes |
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Authors: | See P. Paul D.J. |
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Affiliation: | Cavendish Lab., Cambridge Univ.; |
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Abstract: | Small area resonant tunneling diodes (RTDs) with strained Si0.4Ge0.6 potential barriers and a strained Si quantum well grown on a relaxed Si0.8Ge0.2 virtual substrate were fabricated and characterized. A room temperature peak current density (JP) of 282 kA/cm2 with a peak to valley current ratio (PVCR) of 2.43 were recorded for a 5×5 μm 2 sample, the highest values reported to date for Si/Si1-xGex RTDs. Scaling of the device size demonstrated a decrease in JP proportional to an increase in the lateral area of the tunnel junctions, whereas the PVCR remained approximately constant. This observation suggests that the dc behavior of such Si/Si1-xGex RTD design is presently limited by thermal effects |
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