Degradation of N2O-annealed MOSFET characteristics inresponse to dynamic oxide stressing |
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| Authors: | Chen JC Liu Z Krick JT Ko PK Hu C |
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| Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
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| Abstract: | The performance of n-MOSFETs with furnace N2O-annealed gate oxides under dynamic Fowler-Nordheim bipolar stress was studied and compared with that of conventional oxide (OX). Time-dependent dielectric breakdown at high frequency was shown to be improved for the N2 O-annealed devices compared with that for devices with OX. In addition, a smaller Vt shift after stress was found for nitrided samples. The shift decreased with increasing stressing frequency and annealing temperature. Measurements of both Gm and Dit revealed a peak frequency at which the degradation was the worst. A hole trapping/migration model has been proposed to explain this |
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