Magnetron sputter deposition of (SiC)1−x(AlN)x solid solution films

Magnetron sputtering of polycrystalline SiC-AlN targets was used to obtain films of (SiC)_{1− x} (AlN)_x solid solutions on silicon carbide (6H-SiC) substrates heated to a temperature in the range T = 500–1200°C. The deposits were characterized with respect to structure, composition, and optical absorption. It is demonstrated that the films obtained on 6H-SiC substrates at T ≥ 1000°C possess a single crystal structure. The compositions of (SiC)_1−x (AlN)_x films are close to those of the corresponding SiC-AlN targets.