Micro-raman characterization of molecular-beam epitaxial ge heterolayers on Si substrates |
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| Authors: | M Ichimura Y Moriguchi A Usami T Wada A Wakahara A Sasaki |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, Nagoya Institute of Technology, 466 Nagoya, Japan;(2) Department of Electrical Engineering, Kyoto University, 606-01 Kyoto, Japan |
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| Abstract: | Molecular-beam epitaxial germanium heterolayers on silicon are characterized by micro-Raman spectroscopy. The samples are
angle-lapped to probe the near-interface region. A small positive shift in the germanium phonon frequency is observed near
the interface compared with the surface of the 1 μm thick layer. This indicates that the misfit stress is not relaxed completely
in the as-grown layers. The samples are annealed at 700°C, a temperature higher than the growth temperature, and then the
germanium peak shifts toward lower frequency near the interface. This would be due to both thermal stress and formation of
an interfacial alloy layer by the interdiffusion. After annealing at 850°C, the germanium peak shifts downward further because
of the interdiffusion, and the peak due to the Si−Ge vibration is clearly observed near the interface. |
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| Keywords: | Ge/Si heterolayer interdiffusion lattice mismatch Raman |
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