High-resistivity GaSb bulk crystals grown by the vertical bridgman method |
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| Authors: | R Pino Y Ko P S Dutta |
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| Affiliation: | (1) Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, 12180 Troy, NY |
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| Abstract: | Heavily compensated GaSb (2-in.-diameter substrates) with resistivity as high as 7 × 103 Ω-cm, corresponding to a net donor concentration of 3.5×1013 cm−3 at 77 K, and 16.4 Ω-cm, corresponding to net donor concentration of 1.16×1016 cm−3 at 300 K, have been obtained by tellurium (Te) compensation in vertical-Bridgman-grown bulk crystals. Very interesting p-
to n-type as well as n- to p-type changes have been observed as a function of temperature in these samples. |
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| Keywords: | GaSb high-resistivity substrates Bridgman method |
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