| 分子束外延高质量GaAs-AlGaAs量子阱结构 |
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| 引用本文： | 梁基本,孔梅影,孙殿照,曾一平,黄运衡.分子束外延高质量GaAs-AlGaAs量子阱结构[J].半导体学报,1988,9(2):213-216. |
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| 作者姓名： | 梁基本 孔梅影 孙殿照 曾一平 黄运衡 |
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| 作者单位： | 中国科学院半导体研究所 北京
(梁基本，孔梅影，孙殿照，曾一平)，中国科学院半导体研究所 北京(黄运衡) |
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| 摘 要： | 利用国产分子束外延设备研制出高质量GaAs-AlGaAs量子阱结构材料.经光荧光测量分析,其n=1的电子-重空穴自由激子复合发光的谱线很窄,半峰宽仅1.2MeV(阱宽141A,温度10.5K),表明量子阱阱宽和异质结界面平整度的起伏小于一个单原于层.样品从低温到室温都能保持激子发光特性.
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| 关 键 词： | 分子束外延 GaAs-AlGaAs 量子阱结构 |
High Quality MBE GaAs-AlGaAs Quantum Well Structures |
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| Liang Jiben/Institute of Semiconductors,Academia SinicaKong Meiying/Institute of Semiconductors,Academia SinicaSun Dianzhao/Institute of Semiconductors,Academia SinicaZheng Yiping/Institute of Semiconductors,Academia SinicaHuang Yunheng/Institute of Semiconductors,Academia Sinica.High Quality MBE GaAs-AlGaAs Quantum Well Structures[J].Chinese Journal of Semiconductors,1988,9(2):213-216. |
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| Authors: | Liang Jiben/Institute of Semiconductors Academia SinicaKong Meiying/Institute of Semiconductors Academia SinicaSun Dianzhao/Institute of Semiconductors Academia SinicaZheng Yiping/Institute of Semiconductors Academia SinicaHuang Yunheng/Institute of Semiconductors Academia Sinica |
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| Abstract: | High quality GaAs-AlGaAs QW structures have been prepared by a home-made MBEsystom.The line width of PL spectrum of n=1 electron-heavy hole free exciton recombina-tion is very narrow and its full width of half maximum (FWHM) is only 1.2 meV for wellwidth 141 A at 10.5 K. It indicates that the fluctuation of well width and flatness of interfaceis less than one monolayer. The emission is kept to be excitonic from low tomperature to roomtemperature. |
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| Keywords: | Molecular beam epitaxy GaAs-AlGaAs Quantum well structure |
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