掺镁ZnO基薄膜体声波谐振器的制备和性能研究

固体装配型薄膜体声波谐振器(FBAR)机械强度好,尺寸小,可在硅片上三维立体集成,灵敏度大,在未来的通信设备制作高带通滤波器和物联网传感器中展现出广泛的应用前景。通过射频磁控溅射系统制备了以掺镁ZnO(MgxZn1-xO)作为压电层的固体装配型薄膜体声波谐振器,研究了掺镁ZnO对薄膜体声波谐振器谐振性能的影响。利用场发射扫描电镜(FESEM)对FBAR的结构进行了微观表征。比较了不同掺镁ZnO靶材对于晶向和谐振性能的影响。通过优化条件,制备出了性能优越的FBAR,其谐振频率在1.8~2.4GHz,品质因数(Q)可达800,回波损耗可达-30dB。

Preparation and Performance Study on Mg doped ZnO Solid Mounted Film Bulk Acoustic Resonator

The solid mounted film bulk acoustic resonator shows a broad application prospects for the high band pass filter of future communication equipments and the internet of things (IoT) sensors due to its excellent mechanical strength, small size and 3D integration on silicon with ordinary IC. In this paper solid mounted resonator film bulk acoustic resonators (SMR FBARs) were fabricated on the Mg doped ZnO (MgxZn1-xO ) substrate prepared by RF magnetron sputtering. The influence of Mg doped ZnO on the resonator properties were studied by XRD and via the network analyzer measurements. The micro structure characterization of the prepared FBAR was also carried out by field emission scanning electron microcopy (FESEM). The effects of ZnO target materials with different Mg dopant contents on the crystal orientation and resonant performance have been carried out and compared. The high quality FBAR with resonant frequency of 1.8~2.4 GHz,Q of 800 and return loss of -30 dB has been fabricated through optimizing the conditions.