CMOS器件电离辐射损伤等效研究中损伤敏感性的确定

Determination of damage sensitivity in the study of ionizing radiation damage equivalence in CMOS devices

Damage sensitivity, a characteristic parameter in the study of ionizing radiation damage equivalence in CMOS devices, is a complex function of total dose, dose rate, radiation source, particle energy, supply voltage, gate bias and transistor type. In this paper mainly reported is the responses of total dose and dose rate. Under our experimental conditions, it is found that damage sensitivity for CMOS devices is almost independent of total dose and only have a weak dependence on dose rate.