| 用微波反射法测HgCdTe中少数载流子寿命 |
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| 引用本文： | 黄仕华,夏成杰,贾友见. 用微波反射法测HgCdTe中少数载流子寿命[J]. 半导体光电, 2000, 21(4): 253-255 |
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| 作者姓名： | 黄仕华 夏成杰 贾友见 |
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| 作者单位： | [1]昆明理工大学理学院 [2]昆明物理研究所 |
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| 摘 要： | 介绍了用微波反射法测量ＨｇＣｄＴｅ中的少数载流子寿命，分析了其测量原理，并与接触式的光电导衰减法进行了比较。
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| 关 键 词： | 微波反射法 载流子寿命 HgCdTe |
| 文章编号： | 1001-5868(2000)04-0253-03 |
| 修稿时间： | 1999-09-20 |
Measurement of Minority Carrier Lifetime in HgCdTe Using Microwave Reflectance Technique |
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| HUANG Shi hua ,XIA Cheng jie ,JIA You jian ,MENG Qing lan. Measurement of Minority Carrier Lifetime in HgCdTe Using Microwave Reflectance Technique[J]. Semiconductor Optoelectronics, 2000, 21(4): 253-255 |
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| Authors: | HUANG Shi hua XIA Cheng jie JIA You jian MENG Qing lan |
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| Affiliation: | HUANG Shi hua 1,XIA Cheng jie 2,JIA You jian 1,MENG Qing lan 1 |
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| Abstract: | A new method of microwave reflectance applied in measurement for the minority carrier lifetime in HgCdTe is introduced.The measuring mechanism is analyzed and comparison with the contact photoconduction decay measurement is carried out. |
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| Keywords: | microwave reflectance minority carrier lifetime HgCdTe |
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