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Influence of deviation from stoichiometry on the photoluminescence in CdTe doped with indium |
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| Authors: | Suma Gurumurthy K S R K Rao A K Sreedhar H L Bhat B Sundersheshu R K Bagai Vikram Kumar |
| Affiliation: | (1) Department of Physics, Indian Institute of Science, 560 012 Bangalore, India;(2) Solid State Physics Laboratory, Lucknow Road, 110 054 Delhi, India |
| Abstract: | Low temperature photoluminescence of vacuum and cadmium annealed CdTe:In is reported here. A new peak at ∼ 1·14 eV related to transitions from the conduction band to an acceptor involving a tellurium vacancy has been observed. |
| Keywords: | Cadmium telluride photoluminescence annealing stoichiometry indium doping |
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