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Wannier-Stark oscillations in Zener tunneling currents |
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| Authors: | H. Nagasawa, K. Murayama, M. Yamaguchi, M. Morifuji, C. Hamaguchi, A. Di Carlo, P. Vogl, G. B hm, G. Tr nkle,G. Weimann |
| Affiliation: | a Department of Electronic Engineering, Faculty of Engineering, Osaka University, Suita, Osaka 565, Japan b Walter Schottky Institut, TU München, D-85748, Garching, Germany |
| Abstract: | We have performed measurements of current-voltage characteristics at low temperatures in p-i-n diodes with a thin intrinsic region containing several (GaAs5/(AlAs)2 quantum wells. Under reverse bias, we found an oscillatory structure in the second derivative of the Zener tunneling current. The measurements agree well with theoretical calculations that are based on a transfer matrix approach and a realistic multi-band and multi-channel tight-binding scattering theory. The experiments show that Wannier-Stark oscillations in semiconductors occur in the d.c. current, in the regime of interband tunneling. |
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