A novel magnetic random access memory design using square ring elements for the hard layer |
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Authors: | Dwarakanath N Geerpuram Anand S Mani Vidhya Shankar Baskaran |
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Affiliation: | (1) Department of Electrical and Computer Engineering, University of Illinois at Chicago, 60612 Chicago, IL |
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Abstract: | The behavior of narrow permalloy square rings under the influence of a magnetic field was studied using magnetic force microscopy
(MFM). Two stable states of opposite polarity at remanence and simple switching were observed. We propose a design for the
hard layer of magnetic random access memory (MRAM) that uses these states in square rings for data storage. |
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Keywords: | Magnetic random access memory (MRAM) permalloy square rings data storage |
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