| Ge1-xCx薄膜的制备及红外特性的研究 |
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| 引用本文： | 吴小文,张维佳,钟立志,黄浩.Ge1-xCx薄膜的制备及红外特性的研究[J].材料工程,2005(1):53-57. |
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| 作者姓名： | 吴小文 张维佳 钟立志 黄浩 |
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| 作者单位： | 北京航空航天大学材料物理与化学研究中心,北京,100083 |
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| 摘 要： | 利用等离子体化学气相沉积(PECVD)法制备出Ge1-xCx薄膜,并系统地研究了工艺参数对薄膜成分的影响,以及不同组分Ge1-xCx薄膜的红外光学特性.结果表明,薄膜中的C含量随着CH4/GeH4气体流量比的增大而增大;薄膜的红外折射率随组分的不同在2～4范围内变化;薄膜的沉积速率随射频功率增大而增大,但当功率达到60 W以后其变化不明显;沉积速率随温度的增加而减少;该薄膜具有透长波红外的性能.
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| 关 键 词： | Ge1-xCx薄膜 PECVD 红外特性 沉积速率 膜的制备 红外特性 研究 Properties Infrared Thin Film 性能 长波红外 温度 射频功率 沉积速率 变化 范围 不同组分 折射率 流量比 气体 含量 结果 光学特性 |
| 文章编号： | 1001-4381(2005)01-0053-05 |
| 修稿时间： | 2004年5月14日 |
Preparation of Ge1-xCx Thin Film and Its Infrared Properties |
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| WU Xiao-wen,ZHANG Wei-jia,ZHONG Li-zhi,HUANG Hao.Preparation of Ge1-xCx Thin Film and Its Infrared Properties[J].Journal of Materials Engineering,2005(1):53-57. |
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| Authors: | WU Xiao-wen ZHANG Wei-jia ZHONG Li-zhi HUANG Hao |
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| Abstract: | Ge1-xCx films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition). The effects of processing parameters on carbon content and infrared optical properties of the films were studied. The results showed that carbon content in the films increased with the increased of gas flow radio CH4/GeH4. The infrared refractive index was various from 2 to 4. The deposition rate was increased with the increase of ratio frequency power,but it was almost invariable when the power was higher than 60W. The deposition rate was decreased with increased of the temperature. Ge1-xCx films were transparent in the band of long infrared wavelength. |
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| Keywords: | Ge1-xCx thin film PECVD infrared property deposition rate |
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