| 反激式电源设计中MOSFET的选择与功耗验证 |
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| 引用本文： | 李华嵩,俞卞章,秦祖荫. 反激式电源设计中MOSFET的选择与功耗验证[J]. 电力电子技术, 2006, 40(5): 107-109 |
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| 作者姓名： | 李华嵩 俞卞章 秦祖荫 |
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| 作者单位： | 西北工业大学,陕西,西安,710072;西安交通大学,陕西,西安,710049 |
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| 摘 要： | 讨论了反激电源设计的另外一个方面,即MOSFET场效应管的选择和功耗验证,提出了相应的计算公式与验证流程。该思想也可用于其它电路设计中的MOSFET检验。
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| 关 键 词： | 电源 功耗/反激式 金属氧化物场效应晶体管 |
| 文章编号： | 1000-100X(2006)05-0107-03 |
| 收稿时间： | 2006-01-11 |
| 修稿时间： | 2006-01-11 |
MOSFET Power Consumption Validation in Switching Converter Design |
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| Watson LEE,YU Bian-zhang,Qin Zu-yin. MOSFET Power Consumption Validation in Switching Converter Design[J]. Power Electronics, 2006, 40(5): 107-109 |
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| Authors: | Watson LEE YU Bian-zhang Qin Zu-yin |
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| Abstract: | Based on completion of the design of switching converter main circuit,this paper mainly discusses about MOSFET choosing and introduces power dissipation validation of MOSFET,including four aspects of power dissipation in heat management i.e.conduction losses,switching losses,gate charge losses and off-state leakage current losses.The paper supplies formula(5),(10),(12),(14) for calculating those losses and introduces a process for consumption validation of MOSFET.The process also can be used in other electronic design. |
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| Keywords: | power supply power dissipation/flyback MOSFET |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
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