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Design and Investigation of SiGe Heterojunction Based Charge Plasma Vertical TFET for Biosensing Application
Authors:Singh  Shailendra  Chauhan  Amit Kumar Singh  Joshi   Gaurish  Singh   Jeetendra
Affiliation:1.ECE, PSIT Kanpur, Kanpur – Agra – Delhi, NH2, Bhauti, Kanpur, Uttar Pradesh, 209305, India
;2.Department of Electronics Engineering, REC Kannauj, Aher, Uttar Pradesh, 209732, India
;3.ECE, NIT Sikkim, Barfung Block, Ravangla, Sikkim, 737139, India
;
Abstract:Silicon - This paper explores the Vertical tunnel FET with the introduced layer of SiGe within the channel/source junction using TCAD. As Tunnel FETs smothered the 60 mV/decade confinement...
Keywords:
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