Feasibility Study of Tuning the Threshold Voltage of Nanoscale Fin-shaped Field Effect Transistor (FinFET) via Metal Gate Workfunction Engineering |
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| Authors: | Mehrdad Farzad Ahangari Zahra |
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| Affiliation: | 1.Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran
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| Abstract: | Silicon - In this paper, we comprehensively assess the unique features, feasibility and limitations of dual material gate fin field effect transistor for tuning the threshold voltage in nanoscale... |
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