Study of Effective Graded Oxide Capacitance and Length Variation on Analog,RF and Power Performances of Dual Gate Underlap MOS-HEMT |
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| Authors: | Ghosh Sneha Mondal Anindita Kar Mousiki Kundu Atanu |
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| Affiliation: | 1.Department of Electronics and Communication Engineering, Heritage Institute of Technology, Kolkata, India
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| Abstract: | Silicon - Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective... |
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