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考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法
引用本文:杜明星,边维国,欧阳紫威. 考虑寄生电感的SiC MOSFET半桥电路串扰峰值预测方法[J]. 太阳能学报, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824
作者姓名:杜明星  边维国  欧阳紫威
作者单位:1.天津市复杂系统控制理论及应用重点实验室(天津理工大学),天津 300384;2.丹麦技术大学电气工程系,灵比 2800 Kgs
基金项目:天津市技术创新引导专项基金(20YDTPJC00510)
摘    要:针对光伏并网逆变器中的串扰问题,提出一种考虑寄生电感影响的非开尔文封装SiC MOSFET串扰峰值预测算法。以TO-247-3封装SiC MOSFET构成的半桥电路为研究对象,首先分析各个阶段的串扰电压数学模型,并推导串扰电压的微分表达式;其次提出串扰峰值的预测算法,建立预测峰值所需参数的数学模型;最后搭建实验平台,验证理论的正确性和算法的有效性,为设计光伏并网逆变器的驱动和保护电路提供参考依据。

关 键 词:碳化硅  MOSFET  串扰  并网逆变器  寄生电感  半桥电路
收稿时间:2021-07-14

CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE
Du Mingxing,Bian Weiguo,Ouyang Ziwei. CROSSTALK PEAK PREDICTION METHOD FOR HALF-BRIDGE CIRCUIT OF SiC MOSFET CONSIDERING PARASITIC INDUCTANCE[J]. Acta Energiae Solaris Sinica, 2023, 44(1): 16-23. DOI: 10.19912/j.0254-0096.tynxb.2021-0824
Authors:Du Mingxing  Bian Weiguo  Ouyang Ziwei
Affiliation:1. Tianjin Key Laboratory of Control Theory & Applications in Complicated System, Tianjin University of Technology, Tianjin 300384, China;2. Department of Electrical Engineering, Technical University of Denmark, Lyngby 2800 Kgs, Denmark
Abstract:Aiming at the crosstalk problem in photovoltaic grid-connected inverter, a crosstalk peak prediction algorithm for non-Kelvin packaged SiC MOSFET considering the effect of parasitic inductance is proposed. The half-bridge circuit composed of To-247-3 package SiC MOSFET is studied. Firstly, the mathematical model of crosstalk voltages in each stage are analyzed, and the differential expressions of crosstalk voltage are derived; Secondly, the prediction algorithm of crosstalk peak is proposed, and the mathematical models of the parameters required to predict the crosstalk peak are established; Finally, an experimental platform is built to verify the correctness of the theory and the effectiveness of the algorithm.
Keywords:silicon carbide  MOSFET  crosstalk  grid-connected inverter  parasitic inductance  half-bridge circuit  
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