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A Novel Approach to Model Threshold Voltage and Subthreshold Current of Graded-Doped Junctionless-Gate-All-Around (GD-JL-GAA) MOSFETs |
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| Authors: | Gupta Vidyadhar Awasthi Himanshi Kumar Nitish Pandey Amit Kumar Gupta Abhinav |
| Affiliation: | 1.Department of Electronics and Communication Engineering, Dr. A P J Abdul Kalam Technical University, Lucknow, Uttar Pradesh, 226031, India ;2.Department of Applied Science and Humanities, Rajkiya Engineering College, Ambedkar Nagar, Uttar Pradesh, 224122, India ;3.Department of Electronics Engineering, Rajkiya Engineering College, Sonbhadra, Uttar Pradesh, 231206, India ; |
| Abstract: | Silicon - This present article interprets the analytical models of central channel potential, the threshold voltage, and subthreshold current for Graded-Doped Junctionless-Gate-All-Around... |
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