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Role of Process Parameters on Microstructural and Electronic Properties of Rapid Thermally Grown MoS2 Thin Films on Silicon Substrates |
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| Authors: | Pradhan Diana Kar Jyoti P. |
| Affiliation: | 1.Department of Physics and Astronomy, National Institute of Technology, Rourkela, 769008, India ;2.Centre for Nanomaterials, National Institute of Technology, Rourkela, 769008, India ; |
| Abstract: | Silicon - Miniaturization of the semiconducting materials propelled the discovery of low dimensional transition metal dichalcogenides (TMDC) thin films. In this work, MoS2 thin films have been... |
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