Numerical Study of JAM-GS-GAA FinFET: A Fin Aspect Ratio Optimization for Upgraded Analog and Intermodulation Distortion Performance |
| |
| Authors: | Kumar Bhavya Chaujar Rishu |
| |
| Affiliation: | 1.Department of Applied Physics, Delhi Technological University, Delhi, India
; |
| |
| Abstract: | Silicon - This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static,... |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
