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Physics & Modeling of Ambipolar Snapback Behavior in Gate Grounded NMOS |
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| Authors: | Singh Pragati Dhar Rudra Sankar Baishya Srimanta |
| Affiliation: | 1.Department of Electronics & Communication Engineering, National Institute of Technology Mizoram, Aizawl, 796012, India ;2.Department of Electronics & Communication Engineering, National Institute of Technology Silchar, Assam, 788010, India ; |
| Abstract: | Silicon - This paper models first snapback ambipolar action in NMOS, when subjected to high current stress across the drain terminal. We analyze 2 − D ambipolar current in Gate Grounded NMOS... |
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