Design,Performance Analysis of GaAs/6H-SiC/AlGaN Metal Semiconductor FET in Submicron Technology |
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| Authors: | Balaji B. Rao K. Srinivasa Sravani K. Girija Aditya Marupaka |
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| Affiliation: | 1.Department of Electronics and Communication Engineering, Koneru Lakshmaiah Education Foundation, Green Fields, Vaddeswaram, Andhra Pradesh, India, 522502
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| Abstract: | Silicon - A unique structure of GaAs/6H-SiC/InGaN metal–semiconductor field-effect transistor has been proposed and demonstrated in this work. The proposed GaAs/6H-SiC/InGaNMetal... |
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