The Effect of Dual Dummy Gate in the Drift Region on the on-State Performance of SOI-LDMOS Transistor for Power Amplifier Application |
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| Authors: | Sahoo Jagamohan Mahapatra Rajat |
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| Affiliation: | 1.Department of Electronics and Communication Engineering, National Institute of Technology Durgapur, Durgapur, India
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| Abstract: | Silicon - The present work proposes a novel dual dummy gate Silicon-on-Insulator Laterally Double Diffused Metal-Oxide-Semiconductor (SOI-LDMOS) transistor. TCAD simulation shows considerable... |
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