Analytical and Compact Modeling Analysis of a SiGe Hetero-Material Vertical L-Shaped TFET |
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Authors: | Singh Shailendra Raj Balwinder |
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Affiliation: | 1.Nano Research Lab, Department of Electronics and Communication Engineering, NIT, Jalandhar, India ; |
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Abstract: | Silicon - This paper deals with the development of a novel 2-D analytical modeling of heterojunction vertical L-shaped tunnel FET for characterisation of surface potential and drain current. The... |
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