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Fabrication of n-ZnO/p-Si++ Hetero-junction Devices for Hydrogen Detection: Effect of Annealing Temperature |
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| Authors: | Kumar Vipin Rawal Ishpal Kumar Vinod |
| Affiliation: | 1.Department of Electronics and Communication Engineering, SRM-Institute of Science and Technology, Ghaziabad, UP, 201204, India ;2.Department of Physics, Kirori Mal College, University of Delhi, Delhi, 110007, India ; |
| Abstract: | Silicon - In the present study, we report the fabrication of n-ZnO/p-Si++ hetero-junction devices for the detection of hydrogen leakage in ambient air environment. For the fabrication of... |
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