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A Novel Approach to Investigate the Impact of Hetero-High-K Gate Stack on SiGe Junctionless Gate-All-Around (JL-GAA) MOSFET |
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| Authors: | Gupta Abhinav Rai Sanjeev Kumar Nitish Sigroha Deepak Kishore Arunabh Pathak Varnika Rahman Ziya Ur |
| Affiliation: | 1.Department of Electronics Engineering, Rajkiya Engineering College Sonbhadra, Churk, 231206, India ;2.Department of Electronics & Communication Engineering, M.N.N.I.T.Allahabad, Prayagraj, 211004, India ;3.Department of Electronics & Communication Engineering, KIT, Kanpur, 208001, India ; |
| Abstract: | Silicon - It is a well-known fact that the gate stacking is used to improve the electrostatic behavior of Si0.5Ge0.5 Junctionless Gate-All-Around (JL-GAA) MOSFETs. In gate stacking, the high-k... |
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