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RF MEMS引线键合的射频性能和等效电路研究
引用本文:吴含琴,廖小平.RF MEMS引线键合的射频性能和等效电路研究[J].传感技术学报,2006,19(5):1951-1954.
作者姓名:吴含琴  廖小平
作者单位:东南大学MEMS教育部重点实验室,南京,210096
摘    要:针对一种用键合线连接的简单封装模型进行射频性能的模拟.用HFSS软件对不同长度、不同高度、不同直径以及不同间距的键合线进行模拟,总结出这些参数对键合线射频性能的影响.提出了由顶盖、CPW和键合线组成的简单封装结构的等效电路,并提取参数值.用Mcrowave Office软件对等效电路进行模拟,其S11在6~8 GHz内与HFSS模拟的模型的S11相差2 dB以内,其S21在1~10 GHz内与模型的S21相差0.1 dB以内.

关 键 词:键合线  射频性能  电路模型
文章编号:1004-1699(2006)05-1951-04
修稿时间:2006年7月1日

Research On RF Characterization and Modeling of RF MEMS Bonding Wire Interconnection
Wu Han-qin,Liao Xiao-ping.Research On RF Characterization and Modeling of RF MEMS Bonding Wire Interconnection[J].Journal of Transduction Technology,2006,19(5):1951-1954.
Authors:Wu Han-qin  Liao Xiao-ping
Affiliation:Key Laboratory of MEMS Ministry of Education, Southeast University, Nanjing 210096, China
Abstract:The RF characteristics of bonding wire interconnection in a simple package model were simulated. Different length, height, diameter, and distance of the bonding wires were simulated using HFSS to evaluate the effect of these parameters on the RF characteristic. An equivalent circuit model of the package was presented and the parameters values were extracted. The circuit model was simulated using the soft Microwave Office ,compared to the results simulated using HFSS ,the differences of S_ 11 were within 2 dB ranging from 6 GHz to 10 GHz, the differences of S_ 21 were within 0.1 dB ranging from 1 GHz to 10 GHz.
Keywords:bonding wire  RF characteristic  circuit model
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