Characterization of cathodically deposited carbonaceous films on a silicon substrate |
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Authors: | S E Kwiatek V Desai P J Moran P M Natishan |
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Affiliation: | (1) Mechanical Engineering Department, United States Naval Academy, Annapolis, MD 21402, USA;(2) Naval Research Laboratory, Washington DC, 20375, USA |
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Abstract: | Carbon-based deposits were electrochemically formed on silicon substrates in ethanol at room temperature. This work was based on the work reported by Namba, who described the electrochemical deposition of diamond from organic solutions. The deposits were analysed using a scanning electron microscope, energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and electrochemical impedance spectroscopy. Scanning electron micrographs showed some crystalline deposits on the silicon. EDS was unable to identify carbon in the film, but did reveal impurities such as sodium, potassium, calcium and zinc. It was later established that the impurities most likely came from impurities in the graphite used for a counter electrode. XPS showed the presence of carbon species, and subsequently Raman spectroscopy was used to classify further the carbon deposits. Raman spectroscopy showed the presence of amorphous carbon in some films, but no diamond peak was observed for any of the films. EIS revealed that the impedance of the deposited films was nearly identical to that of the uncoated silicon, and did not resemble the impedance of diamond. Thus, in this work, carbon–based films were formed electrochemically, but these films were not diamond. |
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