Effect of thin strain-compensated Al0.6Ga0.4P layers on the growth of multiple-stacked InP/In0.5Al0.3Ga0.2P quantum dots |
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| Authors: | X B Zhang J H Ryou R D Dupuis L He R Hull G Walter N Holonyak Jr |
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| Affiliation: | (1) Center for Compound Semiconductors, School of Electric and Computer Engineering, Georgia Institute of Technology, 30332 Atlanta, GA;(2) Department of Materials Science and Engineering, The University of Virginia, 22906 Charlottesville, VA;(3) Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, 61801 Urbana, IL |
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| Abstract: | Multiple-stacked InP self-assembled quantum dots (SAQD or QD) were grown on an In0.5Al0.3Ga0.2P matrix lattice-matched on a GaAs (001) substrate using metalorganic chemical vapor deposition. Cathodoluminescence (CL)
scanning electron microscopy, and transmission electron microscopy were employed to characterize the optical, morphological,
and structural properties of the grown QDs. We found that the CL line width broadens and the surface becomes rough with an
increase in the number of stacked QD layers in the structure. However, by introducing thin tensile-strained Al0.6Ga0.4P layers in the middle of In0.5Al0.3Ga0.2P spacer layers to compensate the compressive strain of the InP QD layers, the CL and morphology are significantly improved.
Using this technique, 30-stacked InP/In0.5Al0.3Ga0.2P QD structures with improved CL properties and surface morphology were realized. |
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| Keywords: | Self-assembled quantum dots (SAQD) cathodoluminescence (CL) metalorganic chemical vapor deposition (MOCVD) InP stacked quantum dots (QD) |
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