n型单晶硅片的电阻率和扩散方阻对IBC太阳电池电性能的影响

叉指背接触式(IBC)太阳电池因正面没有金属栅线遮挡,具有较高的短路电流,且组件外观更加美观。但由于IBC太阳电池正负电极在背面交叉式分布,在制备过程中需要采用光刻掩模技术进行隔离,难以实现大规模生产。采用Quokka软件仿真模拟了电阻率和扩散方阻对n型IBC太阳电池效率的影响,并对不同电阻率和扩散方阻的电池片进行了实验验证,从n型单晶硅片电阻率的选择和扩散工艺优化方面为IBC太阳电池的规模化生产提供了理论基础。实验结果表明,电阻率为3~5Ω·cm、扩散方阻为70Ω/时,小批量生产的IBC太阳电池平均光电转换效率可达23.73%,开路电压为693 mV,短路电流密度为42.44 mA/cm²,填充因子为80.69%。

Effects of Resistivity and Diffusion Square Resistance of n-Type Monocrystal Silicon Wafer on Electrical Properties of IBC Solar Cells

Due to without metal grid on the front side,interdigital back contact(IBC)solar cells have higher short-circuit current and the appearance of the components is more beautiful.However,IBC solar cells are difficult to achieve large-scale production due to the fact that positive and negative electrodes are distributed in a cross pattern on the back side of the battery,which requires lithography mask technology to isolate during the preparation process.Quokka software was used to simulate the effect of the resistivity and diffusion square resistance on the efficiencies of n-type IBC solar cells,and the cells with different resistivities and diffusion square resistances were verified by experiments,providing a theoretical basis for the large-scale production of IBC solar cells from the aspects of the resistivity selection of the n-type monocrystal silicon wafer and optimization of the diffusion process.The experimental results show that when the resistivity is 3-5Ω·cm and the diffusion square resistance is 70Ω/□,the average photoelectric conversion efficiency of the small-batch fobricated IBC solar cell reaches 23.73%,the open-circuit voltage is 693 mV,the short-circuit current density is 42.44 mA/cm²and the filling factor is 80.69%.