| 过渡层和界面电荷对金属硅化物/硅肖特基接触特性的影响 |
| |
| 引用本文： | 马树魁,杨秉雄.过渡层和界面电荷对金属硅化物/硅肖特基接触特性的影响[J].固体电子学研究与进展,1997,17(4):366-371. |
| |
| 作者姓名： | 马树魁 杨秉雄 |
| |
| 作者单位： | [1]铁道科学研究院 [2]宁夏固原师专物理系 |
| |
| 摘 要： | 针对金属硅化物／硅接触存在过渡层，提出了分析这种结构的肖特基接触特性的模型；讨论了过渡层厚度、界面电行及有关参数的影响，分析了不同退火条件下PtSi／Si肖特基二极管的特性。
|
| 关 键 词： | 硅化物 肖特基接触 过渡层 界面电荷 |
The Effect of Gradual Interface Layer and Interface State Charge on the Metal Silicide-Silicon Schottky Contact Behavior |
| |
| Ma Shukui.The Effect of Gradual Interface Layer and Interface State Charge on the Metal Silicide-Silicon Schottky Contact Behavior[J].Research & Progress of Solid State Electronics,1997,17(4):366-371. |
| |
| Authors: | Ma Shukui |
| |
| Abstract: | A model of metal silicide-silicon Schottky contact including the effect of gradual interface layer between the silicide and silicon's surface is presented. The effects of width of transition layer, interface state charge and relative parameters are discussed. In order to check the present model, the behavior of PtSi/Si Schottky diodes annealed under different gas and temperature are analyzed. |
| |
| Keywords: | Silicide Schottky Contatct Transition Layer Interface Charge |
| 本文献已被 CNKI 维普 等数据库收录！ |
