| a－S1∶H CCD的转移特性分析 |
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| 引用本文： | 袁奇燕,徐重阳,张少强,邹雪城.a－S1∶H CCD的转移特性分析[J].液晶与显示,1996(2). |
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| 作者姓名： | 袁奇燕 徐重阳 张少强 邹雪城 |
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| 作者单位： | 华工理工大学固体电子学系 |
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| 摘 要： | 本文从ａ—Ｓｉ∶Ｈ的材料特性出发，采用更为精确的ａ—Ｓｉ∶Ｈ带隙态分布模型计算了ａ—Ｓｉ∶ＨＣＣＤ的转移特性，得出了ａ—Ｓｉ∶Ｈ材料参数对ａ—Ｓｉ∶ＨＣＣＤ的动态特性影响的数值分析结果．理论结果表明，ａ—Ｓｉ∶Ｈ材料带隙中的局域态分布对ａ—Ｓｉ∶ＨＣＣＤ的转移特性有非常大的影响．而且在高频下，ａ－Ｓｉ∶Ｈ中的带尾态对ａ—Ｓｉ∶ＨＣＣＤ转移特性的影响比深局域态要大．
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| 关 键 词： | a—Si∶HCCD，带隙态分布，转移特性 |
THE TRANSFER CIIARACTERISTICS ANALYSIS OF a-Si: H CCD |
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| Yuan Qiyan, Xu Chongyang, Zhang Shaoqiang, Zou Xuecheng.THE TRANSFER CIIARACTERISTICS ANALYSIS OF a-Si: H CCD[J].Chinese Journal of Liquid Crystals and Displays,1996(2). |
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| Authors: | Yuan Qiyan Xu Chongyang Zhang Shaoqiang Zou Xuecheng |
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| Abstract: | In the paper, a more precise distribution of DOS (density of states) was used to analyze the transfer characteristics of a-Si : H CCD. The DOS includes the tail states distribution and the deep states distribution. The numerical results show that the distribution of DOS has a great effect on the transfer characteristics of a-Si:H CCD, and tinder high frequencies the tail states is more important than the deep states. |
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| Keywords: | a-Si:H CCD distribution of DOS transfer characteristics |
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