| 一种高精度带隙基准电压源电路设计 |
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| 引用本文： | 李俊,李新. 一种高精度带隙基准电压源电路设计[J]. 国外电子元器件, 2013, 0(23): 60-62,65 |
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| 作者姓名： | 李俊 李新 |
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| 作者单位： | 沈阳工业大学信息科学与工程学院,辽宁沈阳110870 |
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| 摘 要： | 针对传统CMOS带隙电压基准源电路电源电压较高,基准电压输出范围有限等问题,通过增加启动电路,并采用共源共栅结构的PTAT电流产生电路,设计了一种高精度、低温漂、与电源无关的具有稳定电压输出特性的带隙电压源.基于0.5μm高压BiCMOS工艺对电路进行了仿真,结果表明,在-40℃～85℃范围内,该带隙基准电路的温度系数为7ppm/℃,室温下的带隙基准电压为1.215 V.
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| 关 键 词： | 带隙基准电压源 温度系数 共源共栅 CMOS |
Design of high-accuracy band-gap voltage reference |
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| LI Jun,LI Xin. Design of high-accuracy band-gap voltage reference[J]. International Electronic Elements, 2013, 0(23): 60-62,65 |
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| Authors: | LI Jun LI Xin |
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| Affiliation: | (School of Information Science and Engineering,Shenyang University of Technology, Shenyang llOgTO, China) |
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| Abstract: | In view of the traditional CMOS bandgap voltage reference source circuit power voltage is higher and reference voltage output range is limited.By increasing the starting circuit, and using the cascode configuration of PTAT current generating circuit,designed a high precision, low temperature drift, having a stable voltage output characteristic of the band- gap voltage source independent of the power supply.Based on 0.5μm high voltage BiCMOS process for circuit simulation, the results show that ihe band-gap reference circuit in the range of -40℃ ~ 85 ℃ temperature coefficient is 7ppm / ℃, at room temperature, the band-gap reference voltage is 1.215V. |
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| Keywords: | band-gap voltage reference temperature coefficient cascade CMOS |
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