高抑制比背照式AlxGa1-xN pin日盲紫外探测器研究 |
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引用本文: | 赵文伯,许华胜,申志辉,叶嗣荣,周勋,李艳炯,黄烈云. 高抑制比背照式AlxGa1-xN pin日盲紫外探测器研究[J]. 半导体光电, 2014, 35(2): 176-180 |
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作者姓名: | 赵文伯 许华胜 申志辉 叶嗣荣 周勋 李艳炯 黄烈云 |
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作者单位: | 重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060;重庆光电技术研究所, 重庆 400060 |
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摘 要: | 利用现有外延材料生长技术和器件工艺技术,生长了背照式AlxGa1-xN pin外延材料,并用生长的材料制作了日盲紫外探测器,测试结果表明器件在0V偏压下抑制比达到了6 400。在此基础上,较详细地分析了偏置电压、p-AlxGa1-xN载流子浓度和Al组分、极化效应对背照式AlxGa1-xN pin日盲紫外探测器抑制比的影响及非日盲光生载流子的限制机制。分析表明,提高p-AlxGa1-xN载流子浓度和GaN/AlxGa1-xN异质结极化强度是现有技术条件下提高器件抑制比的有效途径。
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关 键 词: | 日盲探测器 抑制比 AlxGa-xN pin 背照式 |
收稿时间: | 2013-10-03 |
Study on Back-illuminated AlxGa1-xN pin Solar-blind UV Photodetectors with High Rejection Ratio |
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Abstract: | In this paper, back-illuminated AlxGa1-xN-pin epitaxial materials were grown, and then solar-blind UV photodetectors with a high rejection ratio of up to 6400 tested under 0V bias were fabricated. The effects of bias voltage, the carrier concentration and Al component in p-AlxGa1-xN, and polarization effect on the rejection ratio of back-illuminated solar-blind UV photodetectors are analyzed in detail, and also the suppressing mechanisms of non-solar-blind photo-induced carriers are discussed. It is shown that increasing the carrier concentration in p-AlxGa1-xN and the polarization strength at p-GaN/p-AlxGa1-xN heterojunction are the most effective methods for enhancing the rejection ratio of photodetectors. |
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Keywords: | solar-blind photodiode rejection ratio AlxGa1-xN pin back-illuminated structure |
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