| CVD金刚石薄膜的掺硼研究 |
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| 引用本文： | 杨小倩,胡晓君,沈荷生,张志明,李荣斌,何贤昶. CVD金刚石薄膜的掺硼研究[J]. 机械工程材料, 2002, 26(1): 16-18,28 |
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| 作者姓名： | 杨小倩 胡晓君 沈荷生 张志明 李荣斌 何贤昶 |
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| 作者单位： | 上海交通大学金属基复合材料国家重点实验室,上海,200030 |
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| 基金项目： | 国家自然科学基金资助项目 ( 5 0 0 82 0 0 5 ) |
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| 摘 要： | 采用固体三氧化二硼，在单晶硅（100）衬底上用微波CVD法生长金刚石薄膜和进行p型掺杂，对不同掺杂碳源浓度下CVD金刚石薄膜的掺杂和生长行为、薄膜表面形貌、薄膜的电性能等进行了研究。结果表明，硼确实已掺入金刚石膜中；在SEM下观察到硼掺杂金刚石膜结构致密没有孔洞；用Ti和Ag分别在掺杂金刚石薄膜表面制备电极，测试了在不同温度下电流随温度的变化。
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| 关 键 词： | CVD 金刚石薄膜 掺杂 电学性能 掺硼 |
| 文章编号： | 1000-3738(2002)01-0016-03 |
Boron Doping in CVD Diamond Films |
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| YANG Xiao qian,HU Xiao jun,SHEN He sheng,ZHANG Zhi ming,LI Reng bin,HE Xian chang. Boron Doping in CVD Diamond Films[J]. Materials For Mechanical Engineering, 2002, 26(1): 16-18,28 |
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| Authors: | YANG Xiao qian HU Xiao jun SHEN He sheng ZHANG Zhi ming LI Reng bin HE Xian chang |
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| Abstract: | Boron doped diamond thin films are grown by microwave CVD method. The dopant is solid B 2O 3,which locates in a round groove on the sample holder. The research is concerned of the CVD diamond growth condition, the film morphology and their electrical properties. It is showed that boron has been incorporated into the diamond films. Ti and Ag electrodes are made on doped film surfaces respectively, the current passed through the two electrodes is measured at different temperaturs. |
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| Keywords: | CVD diamond film B doping electrical property |
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