硅诱导坑形成及深孔列阵电化学微加工工艺方案的探讨

本文采用P型单晶硅片,在三极电解槽中,进行了电化学深刻蚀的探索性实验.对湿法刻蚀和电化学刻蚀中的工艺问题进行了初步的理论和实验研究,同时,采用SEM对实验样品进行了形貌分析,并采用电流突破模型对电化学深孔刻蚀机理进行了理论分析.通过理论和实验研究,发现即使硅片晶向不准,仍能刻蚀出方孔列阵.其结果对进一步开展这方面的研究工作具有指导意义,在进一步深入开展研究电化学体硅微加工技术时,可有望成为实现硅深孔列阵加工的新技术.

Formation of Silicon pit and Study on Method of Electrochemical Micromachining of Deep Macropore Array

P-type Silicon crystal plates have been adopted in the paper. Then the electrochemical etching experiments are done in three electrodes electrobath .And some technology questions such as wet etching and electrochemical etching have been analyzed .At the same time sample shape is analyzed by scanning electron microscope .According to current burst model theory , the electrochemical deep macropore etching mechanism are analyzed .According to theoretical and experimental investigation,we found crystal direction has nothing to do with forming square-holes. The consequences are benefit to Silicon electrochemical micromachining technology and the electrochemical etching process will become hopefully an new technology about Silicon deep-holes etching technology.