| 一种基于载流子的双栅MOSFET解析模型 |
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| 引用本文： | 何进,陶亚东,边伟,刘峰,牛旭东,宋岩. 一种基于载流子的双栅MOSFET解析模型[J]. 半导体学报, 2006, 27(13): 242-247 |
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| 作者姓名： | 何进 陶亚东 边伟 刘峰 牛旭东 宋岩 |
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| 作者单位： | 北京大学微电子学研究院，北京 100871;北京大学深圳研究生院 信息工程学院,深圳 518055;北京大学深圳研究生院 信息工程学院,深圳 518055;北京大学深圳研究生院 信息工程学院,深圳 518055;北京大学微电子学研究院，北京 100871;北京大学深圳研究生院 信息工程学院,深圳 518055;北京大学微电子学研究院，北京 100871 |
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| 摘 要： | 提出一种全新的基于载流子求解的双栅MOSFET解析模型. 针对无掺杂对称双栅MOSFET结构，该模型由求解泊松方程的载流子分布和Pao-Sah电流形式直接发展而来. 发展的解析模型完全基于MOSFET的基本器件物理进行直接推导,结果覆盖了双栅 MOSFET所有的工作区:从亚阈到强反型和从线性到饱和区,不需要任何额外假设和拟合参数. 模型的预言结果被2D数值模拟很好地验证，表明该解析模型是一个理想的双栅MOSFET建模架构.
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| 关 键 词： | MOSFETs 器件物理 非传统MOSFET 双栅结构 器件模型 载流子方法 |
A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs |
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| He Jin,Tao Yadong,Bian Wei,Liu Feng,Niu Xudong and Song Yan. A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs[J]. Chinese Journal of Semiconductors, 2006, 27(13): 242-247 |
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| Authors: | He Jin Tao Yadong Bian Wei Liu Feng Niu Xudong Song Yan |
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| Affiliation: | Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Computer and Information Engineering,Shenzhen Graduate School,Peking University,Shenzhen 518055,China;School of Computer and Information Engineering,Shenzhen Graduate School,Peking University,Shenzhen 518055,China;School of Computer and Information Engineering,Shenzhen Graduate School,Peking University,Shenzhen 518055,China;Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China;School of Computer and Information Engineering,Shenzhen Graduate School,Peking University,Shenzhen 518055,China;Institute of Microelectronics,School of Electronic Engineering and Computer Science,Peking University,Beijing 100871,China |
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| Abstract: | A carrier-based analytic model for undoped symmetric double-gate MOSFETs is presented.It is based on an exact solution of the Poisson equation coupled to the Pao-Sah current formulation in terms of the carrier concentration.From this model,the different dependences of the surface potential,centric potential,inversion charge and the current on the silicon body thickness and the gate oxide are elucidated analytically,and then the predicted I-V characteristics are compared with the 2D numerical simulations.The analytical results of the model presented show in a good agreement with the 2D simulation,demonstrating the model is valid for all operation regions and traces the transition between them without any auxiliary variable and function. |
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| Keywords: | MOSFETs device physics non-classical MOSFET double-gate structure compact modeling carrier-based approach |
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