Synthesis and characterization of porous silsesquioxane dielectric films |
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| Authors: | Suzhu Yu Terence K.S. Wong Kantisara Pita |
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| Affiliation: | a School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore
b School of Materials Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singapore |
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| Abstract: | The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 for a film with 20-wt.% loading of the PAMAM polymer. |
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| Keywords: | 77.55.+f Dielectric thin films 81.07 .&minus b Nanoscale materials and structures: fabrication and characterization 78.55. Mb porous materials |
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