Ohmic contacts to n-type GaN |
| |
Authors: | Stephen Miller Paul H Holloway |
| |
Affiliation: | (1) Department of Materials Science and Engineering, University of Florida, 32611-6400 Gainesville, FL |
| |
Abstract: | Ohmic contacts to n-GaN using Ag, Au, TiN, Au/Ti, Au/Mo/Ti, and Au/Si/Ti have been studied. The Fermi level of GaN appears
to be unpinned, and metals and compounds with work functions less than the electron affinity resulted in ohmic contacts. Reactively
sputter deposited TiN was ohmic as deposited. However, Au/Ti, Au/Mo/Ti, and Au/Si/Ti required heat treatments to form ohmic
contacts, with the best being an RTA at 900°C. Ag and Au were shown to diffuse across the GaN surface at T>500°C; therefore,
they are unstable, poor ohmic contact metallizations as single metals. The other contact schemes were thermally stable up
to 500°C for times of 30 min. |
| |
Keywords: | GaN Ohmic contacts Titanium |
本文献已被 SpringerLink 等数据库收录! |
|