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Holography and plasma oxidation for uniform nanoscale two dimensional channel formation of vertical organic field-effect transistors with suppressed gate leakage current |
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| Authors: | Donghyun Kim Jaewook Jeong Hwarim Im Sungmo Ahn Heonsu Jeon Changhee Lee Yongtaek Hong |
| Affiliation: | aDepartment of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea;bInter-University Semiconductor Research Center, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Republic of Korea;cDepartment of Physics and Astronomy, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-747, Republic of Korea |
| Abstract: | Vertical organic field-effect transistors (VOFETs) with nanoscale channel openings have been fabricated using pentacene as an active layer material. To achieve uniform nanoscale two-dimensional channel openings, a laser holography lithography has been introduced. Uniformly distributed and well-aligned holes with 250 nm diameter were successfully obtained with the laser holography lithography. VOFET devices with these channel openings have shown high on/off ratio of about 103 without any further treatment. Gate leakage current was also decreased with an additional insulating layer generated on the gate electrode sidewall via plasma oxidation. |
| Keywords: | Vertical organic field effect transistors Organic thin film transistors Laser holography |
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