Modelling the threshold voltage of short-channel silicon-on-insulator MOSFETs

A simple analytical model for the threshold voltage of short-channel, thin-film, fully-depleted silicon-on-insulator MOSFETs is presented. The model is based on the analytical solution for the two-dimensional potential distribution in the silicon film, which is taken as the sum of the long-channel solution to the Poisson equation and the short-channel solution to the Laplace equation. The model shows close agreement with numerical PISCES simulation results. The equivalence between the proposed model and the parabolic model of Young (1989) is also proven.<>