Bipolar mechanisms present in short channel SOI-MOSFET transistors |
| |
Authors: | G. Janczyk |
| |
Affiliation: | Warsaw University of Technology, Ul. Koszykowa 75, 00-662 Warsaw, Poland |
| |
Abstract: | The set of physical mechanisms present in the body of SOI MOS transistors has been presented. Selected bipolar aspects of physical phenomena usually oversimplified in existing SOI MOS models have been analyzed. The action of parasitic bipolar transistor present in the body of SOI MOS transistor is one of them and seems to become especially important as transistor channel dimensions are reduced. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|