| SnO2-x透明导电薄膜的制备及其导电性能研究 |
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| 引用本文： | 闫军锋,邓周虎,张志勇,张富春,王雪文.SnO2-x透明导电薄膜的制备及其导电性能研究[J].电子元件与材料,2006,25(7):59-62. |
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| 作者姓名： | 闫军锋 邓周虎 张志勇 张富春 王雪文 |
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| 作者单位： | 西北大学信息科学与技术学院,陕西,西安,710069;西北大学信息科学与技术学院,陕西,西安,710069;西北大学信息科学与技术学院,陕西,西安,710069;西北大学信息科学与技术学院,陕西,西安,710069;西北大学信息科学与技术学院,陕西,西安,710069 |
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| 基金项目： | 陕西省自然科学基金;西北大学校科研和教改项目 |
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| 摘 要： | 以金属有机化合物(MO)四甲基锡Sn(CH3)4]为源物质,采用等离子体增强化学气相沉积技术(PECVD),在玻璃片上制备了SnO2–x薄膜。并用XRD、AFM等对样品进行分析。结果表明,氧气与四甲基锡(氮气携带)流量比为10:6,衬底温度为150℃,淀积时间为2h制备的薄膜表面平整,方块电阻大约为36.5?/□,紫外–可见光透射率在90%以上。
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| 关 键 词： | 无机非金属材料 SnO2-x MO-PECVD 透明导电薄膜 密度泛函理论 |
| 文章编号： | 1001-2028（2006）07-0059-04 |
| 收稿时间： | 2006-02-22 |
| 修稿时间： | 2006-02-22 |
Preparation and Study of Conducting Characterization on SnO2-x Transparent Conducting Thin Films |
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| YAN Jun-feng,DENG Zhou-hu,ZHANG Zhi-yong,ZHANG Fu-chun,WANG Xue-wen.Preparation and Study of Conducting Characterization on SnO2-x Transparent Conducting Thin Films[J].Electronic Components & Materials,2006,25(7):59-62. |
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| Authors: | YAN Jun-feng DENG Zhou-hu ZHANG Zhi-yong ZHANG Fu-chun WANG Xue-wen |
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| Abstract: | The SnO2–x thin films were prepared on glass by MO-PECVD process, in which metal-organic compound Sn(CH3)4 was used as a source materials. The thin films were analyzed by XRD、AFM, and so on. The results show that the film surface is smooth and plane under the preparing conditions that the flow rate of O2 and Sn(CH3)4 carried by N2 is 10 to 6, substrate temperature is 150℃ and deposition time is 2 h. The sheet resistance of the thin film is 36.5 Ohm per square and the transmittance of ultraviolet- visible light is over 90%. |
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| Keywords: | SnO2-x MO-PECVD |
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